Publication | Closed Access
Growth and properties of low-doped In0.53Ga0.47As LPE layers using rare-earth oxides
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Citations
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References
1989
Year
Materials ScienceMaterials EngineeringEpitaxial GrowthEngineeringOxide ElectronicsApplied PhysicsGallium OxideSemiconductor MaterialMolecular Beam EpitaxyRare-earth Oxides
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