J. Selders

Optical and crystallographic properties and impurity incorporation of Ga<i>x</i>In1−<i>x</i>As (0.44&amp;lt;<i>x</i>&amp;lt;0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition

K.-H. Goetz, D. Bimberg, H. Jürgensen et al. · Journal of Applied Physics · 1983 · 361 citations

Engineering, Materials Engineering, Materials Science +17

A monolithic 60 GHz diode mixer and IF amplifier in compatible technology

B. Adelseck, A. Colquhoun, J.-M. Dieudonne et al. · IEEE Transactions on Microwave Theory and Techniques · 1989 · 24 citations

Engineering, Electrical Engineering, Microelectronics +16

LPE growth of GaxIn1-xAs layers on InP under PH3 partial pressure and results on Mg-doping

H. Beneking, N. Grote, J. Selders · Journal of Crystal Growth · 1981 · 21 citations

Engineering, Materials Engineering, Materials Science +12

A fully monolithic integrated 60 GHz receiver

A. Colquhoun, G. Ebert, J. Selders et al. · 2003 · 18 citations

Engineering, Electrical Engineering, Microelectronics +16

Schottky-barriers on p-type GaInAs

J. Selders, N. Emeis, H. Beneking · IEEE Transactions on Electron Devices · 1985 · 18 citations

Engineering, Electrical Engineering, Materials Science +17