H. Jürgensen

Optical and crystallographic properties and impurity incorporation of Ga<i>x</i>In1−<i>x</i>As (0.44&amp;lt;<i>x</i>&amp;lt;0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition

K.-H. Goetz, D. Bimberg, H. Jürgensen et al. · Journal of Applied Physics · 1983 · 360 citations

Optical Materials, Engineering, Crystal Growth Technology +19

Deposition of high quality GaAs films at fast rates in the LP-CVD system

K. Grüter, M. Deschler, H. Jürgensen et al. · Journal of Crystal Growth · 1989 · 57 citations

Fast Rates, Electrical Engineering, Lp-cvd System +8

Comparison of ethyldimethylindium (EDMIn) and trimethylindium (TMIn) for GaInAs and InP growth by LP-MOVPE

J. Knauf, D. Schmitz, G. Strauch et al. · Journal of Crystal Growth · 1988 · 55 citations

Chemical Engineering, Engineering, Organic Chemistry +2

MOCVD of high quality YBa2Cu3O7−δ thin films using a fluorinated barium precursor

Barbara C. Richards, Stephen L. Cook, D. L. Pinch et al. · Physica C Superconductivity · 1995 · 49 citations

Materials Science, High-tc Superconductivity, Engineering +8

Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

R. Niebuhr, K. H. Bachem, U. Kaufmann et al. · Journal of Electronic Materials · 1997 · 38 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6