H. Jürgensen - Concepedia

Author

H. Jürgensen

Also Known As

H JURGENSEN, H Jurgensen, H Jürgensen, H. Jurgensen, H. JÜRGENSEN, H. JÜrgensen, H. Jürgensen, Holger Jurgensen, Holger Jürgensen, Jurgensen, H.

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Aixtron (Germany)RWTH Aachen University FH Aachen Friedrich-Alexander-Universität Erlangen-Nürnberg Technische Universität Berlin

About

H. Jürgensen is an author at Aixtron (Germany) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	29	965
2	Natural Sciences	3	3	55
3	Health Sciences	1	1	13
4	Medicine	1	1	34
5	Allergy	1	1	34

H. Jürgensen

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Optical and crystallographic properties and impurity incorporation of Ga<i>x</i>In1−<i>x</i>As (0.44&lt;<i>x</i>&lt;0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition K.-H. Goetz, D. Bimberg, H. Jürgensen, Journal of Applied Physics Optical MaterialsEngineeringCrystal Growth TechnologyOptoelectronic DevicesLuminescence Property	1983	360
Deposition of high quality GaAs films at fast rates in the LP-CVD system K. Grüter, M. Deschler, H. Jürgensen, Journal of Crystal Growth Fast RatesElectrical EngineeringLp-cvd SystemEngineeringApplied Physics	1989	57
Comparison of ethyldimethylindium (EDMIn) and trimethylindium (TMIn) for GaInAs and InP growth by LP-MOVPE J. Knauf, D. Schmitz, G. Strauch, Journal of Crystal Growth Chemical EngineeringEngineeringOrganic ChemistryChemistryInp Growth	1988	55
MOCVD of high quality YBa2Cu3O7−δ thin films using a fluorinated barium precursor Barbara C. Richards, Stephen L. Cook, D. L. Pinch, Physica C Superconductivity Materials ScienceHigh-tc SuperconductivityEngineeringFluorinated Barium PrecursorOxide Electronics	1995	49
Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O R. Niebuhr, K. H. Bachem, U. Kaufmann, Journal of Electronic Materials Wide-bandgap SemiconductorElectrical EngineeringEngineeringOptical PropertiesApplied Physics	1997	38
Heat transfer and mass transport in a multiwafer MOVPE reactor: modelling and experimental studies T. Bergunde, M. Dauelsberg, L. Kadinski, Journal of Crystal Growth Radiative Heat TransferMass TransportElectrical EngineeringMultiwafer Movpe ReactorEngineering	1997	34
The Human Adenoidal Mast Cell. Suceptibility to Different Secretagogues and Secretion Inhibitors W. Schmutzler, K. Delmich, Dieter Eichelberg, International Archives of Allergy and Immunology Mast Cell DisorderImmunologyPharmacotherapyDermatologyImmunotherapy	1985	34
Vapour phase growth of InP from the In-PH3-HCl-H2 system H. Jürgensen, J. Korec, M. Heyen, Journal of Crystal Growth Chemical EngineeringEngineeringPhase EquilibriumPhysical ChemistryExperimental Thermodynamics	1984	31
Optical properties of very narrow GaInAs/InP quantum wells grown by low-pressure metalorganic vapor phase epitaxy Detlev Grützmacher, K. Wolter, H. Jürgensen, Applied Physics Letters Optical MaterialsEngineeringNarrowest Exciton LinewidthLargest Energy ShiftMultiple Gainas/inp Quantum	1988	31
Interface roughness and charge carrier recombination lifetimes in GaInAs/InP quantum wells grown by LP-MOVPE Manuel Engel, R. K. Bauer, D. Bimberg, Journal of Crystal Growth Semiconductor TechnologyPhysicsGainas/inp Quantum WellsApplied PhysicsCompound Semiconductor	1988	28

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