Stability of tantalum nitride thin film resistors

Chi Au, Wayne A. Anderson, D. Schmitz, +2

Journal of materials research/Pratt's guide to venture capital sources

Materials EngineeringMaterials ScienceEngineeringThin Film ResistorsApplied Physics +2

Comparison of ethyldimethylindium (EDMIn) and trimethylindium (TMIn) for GaInAs and InP growth by LP-MOVPE

J. Knauf, D. Schmitz, G. Strauch, +3

Journal of Crystal Growth

Chemical EngineeringEngineeringOrganic ChemistryChemistryInp Growth

Heat transfer and mass transport in a multiwafer MOVPE reactor: modelling and experimental studies

T. Bergunde, M. Dauelsberg, L. Kadinski, +5

Journal of Crystal Growth

Radiative Heat TransferMass TransportElectrical EngineeringMultiwafer Movpe ReactorEngineering +9

In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere

H. Hardtdegen, Markus Pristovsek, H. Menhal, +3

Journal of Crystal Growth

Ii-vi SemiconductorElectrical EngineeringGaas GrowthEngineeringApplied Physics +5

Process optimisation of MOVPE growth by numerical modelling of transport phenomena including thermal radiation

T. Bergunde, M. Dauelsberg, L. Kadinski, +5

Journal of Crystal Growth

Radiative Heat TransferEngineeringThermal RadiationHeat Transfer ProcessNumerical Simulation +14

Replacement of hydrides by TBAs and TBP for the growth of various III–V materials in production scale MOVPE reactors

R. Beccard, G. Lengeling, D. Schmitz, +2

Journal of Crystal Growth

Materials EngineeringMaterials ScienceChemical EngineeringEngineeringCatalysis +3

Demonstration of the N2 carrier process for LP-MOVPE of

M. Hollfelder, S. J. Hon, B. Setzer, +5

Journal of Crystal Growth

Electrical EngineeringEngineeringApplied PhysicsN2 Carrier ProcessCharge Carrier Transport +1

Large area growth of extremely uniform AlGaAs/GaAs quantum well structures for laser applications by effective LP-MOVPE

D. Schmitz, G. Strauch, J. Knauf, +3

Journal of Crystal Growth

PhotonicsEngineeringPhysicsUniform Algaas/gaas QuantumApplied Physics +6

Electron capture processes in optically excited In0.53Ga0.47As/InP quantum wells

U. Cebulla, G. Bacher, A. Forchel, +3

Applied Physics Letters

Wide-bandgap SemiconductorQuantum ScienceIn0.53ga0.47as/inp Quantum WellsEngineeringPhysics +11

Growth of extremely uniform III–V compound semiconductor layers by LP-MOVPE by application of the gas foil technique for substrate rotation

D. Schmitz, G. Strauch, H. Jürgensen, +1

Journal of Crystal Growth

SemiconductorsMaterials ScienceSubstrate RotationGas Foil TechniqueEngineering +7