Publication | Closed Access
In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere
29
Citations
11
References
1998
Year
Ii-vi SemiconductorElectrical EngineeringGaas GrowthEngineeringApplied PhysicsMolecular Beam EpitaxyOptoelectronicsNitrogen AtmosphereCompound SemiconductorSitu Characterization
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