Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O - Concepedia

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Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

38

Citations

15

References

1997

Year

R. Niebuhr, K. H. Bachem, U. Kaufmann, Matthias Maier, C. J. Merz, Branko Šantić, P. Schlotter, H. Jürgensen

Journal of Electronic Materials

Wide-bandgap SemiconductorElectrical EngineeringEngineeringOptical PropertiesApplied PhysicsGan Power DeviceGallium OxideCategoryiii-v SemiconductorOptoelectronics

References

	Year	Citations

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