C. J. Merz - Concepedia

Author

C. J. Merz

Fraunhofer Institute for Applied Solid State Physics

Also Known As

C Merz, C. J. Merz, C. Merz, Christoph Merz

Publications

420

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Applied Solid State Physics IBM Research - Thomas J. Watson Research Center North Carolina State University MCNC Research and Development Institute Meijo University

About

C. J. Merz is an author at Fraunhofer Institute for Applied Solid State Physics specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	8	8	290
2	Engineering	7	7	280
3	Electrical Engineering	6	6	220
4	Physics	5	5	208
5	Condensed Matter Physics	1	1	65

C. J. Merz

Publications

403

Citations

H-Index

Page 1

	Year	Citations
Free and bound excitons in thin wurtzite GaN layers on sapphire C. J. Merz, M. Kunzer, U. Kaufmann, Semiconductor Science and Technology	1996	113
Ionized donor bound excitons in GaN Branko Šantić, C. J. Merz, U. Kaufmann, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringPhotoluminescenceEngineeringPhysics	1997	65
The modelling of silicon oxidation from 1 × 10−5 to 20 atmospheres Arnold Reisman, E. H. Nicollian, C.K. Williams, Journal of Electronic Materials EngineeringPhysicsOxidation ResistanceApplied PhysicsSilicon On Insulator	1987	60
Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O R. Niebuhr, K. H. Bachem, U. Kaufmann, Journal of Electronic Materials Wide-bandgap SemiconductorElectrical EngineeringEngineeringOptical PropertiesApplied Physics	1997	38
Low Energy X‐Ray and Electron Damage to IGFET Gate Insulators Arnold Reisman, C. J. Merz, José R. Maldonado, Journal of The Electrochemical Society X-ray SpectroscopyEngineeringRadiation EffectRadiation ExposureIntegrated Circuits	1984	38
Light Generating Carrier Recombination and Impurities in Wurtzite GaN/Al<sub>2</sub>O<sub>3</sub>Grown by MOCVD U. Kaufmann, M. Kunzer, C. J. Merz, MRS Proceedings SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	1995	35
The Effects of Pressure, Temperature, and Time on the Annealing of Ionizing Radiation Induced Insulator Damage in N‐channel IGFET's Arnold Reisman, C. J. Merz Journal of The Electrochemical Society EngineeringRadiation EffectRadiation ExposureIntegrated CircuitsSilicon On Insulator	1983	31
On the Removal of Insulator Process Induced Radiation Damage from Insulated Gate Field Effect Transistors at Elevated Pressure Arnold Reisman, J. Aitken, Ashok K Ray, Journal of The Electrochemical Society Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringBias Temperature Instability	1981	13
Nitridation of silicon in a multiwafer plasma system Arnold Reisman, M. Berkenblit, A. Ray, Journal of Electronic Materials Plasma ApplicationMultiwafer Plasma SystemApplied PhysicsPhysics	1984	10

Page 1