IEEE Transactions on Microwave Theory and Techniques · 1989 · 24 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsConversion GainConversion LossCutoff FrequencyDiode MixersMillimeter-wave Integrated CircuitsMixersMonolithic Microwave Integrated CircuitsNoise Figure
A technology is described which allows the monolithic integration of millimeter-wave Schottky diodes and MESFETs on one chip. The Schottky diodes have a cutoff frequency f/sub T/ of 2300 GHz. A monolithic 60-GHz mixer chip using these diodes shows a conversion loss of 6 dB and a noise figure (DSB) of 3.3 dB. The MESFETs have an f/sub max/ up to 70 GHz. A two-stage IF amplifier realized with this technology shows a gain of 20.6 dB and a noise figure of 1.7 dB at 4 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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