Concepedia

J.P. Hirtz

JH

24

Publications

721

Citations

15

H-Index

1980

Active since

Affiliations

Technicolor (France)(Current)

École Normale Supérieure - PSL

J.P. Hirtz is an author at Technicolor (France) specializing in engineering, applied physics, and electrical engineering.

Top concepts

EngineeringApplied PhysicsOptoelectronicsElectrical EngineeringPhysicsMaterial ScienceOptical PropertiesSemiconductorsPhotonicsMicroelectronics

Publications per year

1980–2008

24

Publications

24

Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor deposition

Manijeh Razeghi, J.P. Hirtz, U.O. Ziemelis et al. · Applied Physics Letters · 1983 · 98 citations

Engineering, Chemistry, Chemical Deposition +16

GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications

J.P. Duchemin, J.P. Hirtz, Manijeh Razeghi et al. · Journal of Crystal Growth · 1981 · 78 citations

Materials Science, Electrical Engineering, Engineering +10

The carrier mobilities in Ga0.47In0.53as grown by organo-mettalic CVD and liquid-phase epitaxy

T. P. Pearsall, J.P. Hirtz · Journal of Crystal Growth · 1981 · 77 citations

Materials Engineering, Materials Science, Liquid-phase Epitaxy +7

Precise Quantized Hall Resistance Measurements in GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As and In<sub>x</sub>Ga<sub>1-x</sub>As/InP Heterostructures

F. Delahaye, F. Alexandre, J. P. André et al. · Metrologia · 1986 · 57 citations

Semiconductors, Quantum Science, Electrical Engineering +13

1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy

Pierre Galtier, Jean-Paul Pocholle, M. N. Charasse et al. · Applied Physics Letters · 1989 · 45 citations

Optical Materials, Engineering, Erbium-doped Gaas +18

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