J.P. Hirtz - Concepedia

Author

J.P. Hirtz

Technicolor (France)

Also Known As

J P Hirtz, J P. Hirtz, J. Hirtz, J. P. HIRTZ, J. P. Hirtz, J.-P. Hirtz, J.P Hirtz, J.P. Hirtz, Jean-Pierre Hirtz

Publications

998

Citations

H-Index

Concepts

All Affiliations

Technicolor (France)École Normale Supérieure - PSL

About

J.P. Hirtz is an author at Technicolor (France) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	20	615
2	Applied Physics	13	18	585
3	Natural Sciences	2	2	113
4	Chemistry	2	2	113
5	Education	1	1	15

J.P. Hirtz

Publications

721

Citations

H-Index

Page 1

	Year	Citations
Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor deposition Manijeh Razeghi, J.P. Hirtz, U.O. Ziemelis, Applied Physics Letters EngineeringChemistryChemical DepositionIi-vi SemiconductorQuantum Materials	1983	98
GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications J.P. Duchemin, J.P. Hirtz, Manijeh Razeghi, Journal of Crystal Growth Materials ScienceElectrical EngineeringEngineeringRf SemiconductorOptoelectronic Materials	1981	78
The carrier mobilities in Ga0.47In0.53as grown by organo-mettalic CVD and liquid-phase epitaxy T. P. Pearsall, J.P. Hirtz Journal of Crystal Growth Materials EngineeringMaterials ScienceLiquid-phase EpitaxyEngineeringApplied Physics	1981	77
Precise Quantized Hall Resistance Measurements in GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As and In<sub>x</sub>Ga<sub>1-x</sub>As/InP Heterostructures F. Delahaye, F. Alexandre, J. P. André, Metrologia SemiconductorsQuantum ScienceElectrical EngineeringSemiconductor TechnologyDifferent Heterostructures	1986	57
1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy Pierre Galtier, Jean-Paul Pocholle, M. N. Charasse, Applied Physics Letters Optical MaterialsEngineeringErbium-doped GaasμM Room-temperature ElectroluminescenceOptoelectronic Devices	1989	45
Microphotoluminescence mapping of packaging-induced stress distribution in high-power AlGaAs laser diodes E. Martı́n, Jean-Pierre Landesman, J.P. Hirtz, Applied Physics Letters Packaging-induced Stress DistributionWide-bandgap SemiconductorEngineeringMicrophotoluminescence MappingLaser Material	1999	39
Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes A. V. Andrianov, S.R.A. Dods, J. Morgan, Journal of Applied Physics Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Physics	2000	34
Kinetic study of metalorganic molecular beam epitaxy of GaP, InP, and Ga<i>x</i>In1−<i>x</i>P Jean-Charles Garcia, P. Maurel, Ph. Bove, Journal of Applied Physics	1991	30
Ga <sub> <i>x</i> </sub> In <sub> 1− <i>x</i> </sub> As <sub> <i>y</i> </sub> P <sub> 1− <i>y</i> </sub> /InP d.h. laser emitting at 1.15 μm grown by low-pressure metalorganic c.v.d. J.P. Hirtz, J.P. Duchemin, P. Hirtz, Electronics Letters	1980	30
Growth of Ga <sub>0.47</sub> In <sub>0.53</sub> As on InP by low-pressure m.o. c.v.d. J.P. Hirtz, J.P. Larivain, J.P. Duchemin, Electronics Letters	1980	24

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