J. P. André

Photoluminescence investigation of InGaAs-InP quantum wells

D. Moroni, J. P. André, E. P. Menu et al. · Journal of Applied Physics · 1987 · 188 citations

Engineering, Materials Engineering, Materials Science +17

Submicron conducting channels defined by shallow mesa etch in GaAs-AlGaAs heterojunctions

H. van Houten, B. J. van Wees, M. G. J. Heijman et al. · Applied Physics Letters · 1986 · 130 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Substrate-driven ordering microstructure in Ga<i>x</i>In1−<i>x</i>P alloys

Pascal Bellon, Jean‐Pierre Chevalier, E. Augarde et al. · Journal of Applied Physics · 1989 · 128 citations

Natural Sciences, Materials Science, Physics +17

High-Efficiency Energy Up-Conversion by an "Auger Fountain" at an InP-AIInas Type-II Heterojunction

W. Seidel, A. N. Titkov, J. P. André et al. · Physical Review Letters · 1994 · 121 citations

Natural Sciences, Materials Science, Electronic Materials +13

Chemical ordering in Ga<i>x</i>In1−<i>x</i>P semiconductor alloy grown by metalorganic vapor phase epitaxy

Pascal Bellon, Jean‐Pierre Chevalier, G. Martin et al. · Applied Physics Letters · 1988 · 119 citations

Natural Sciences, Materials Science, Physics +17