Fundamentals and extraction of velocity saturation in sub-100nm (110)-Si and (100)-Ge

Abstract

A novel RFCV-technique is applied to directly quantify the short channel devices at high V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> , enabling parameter extraction like velocity saturation and critical field. This technique is applied to benchmark Si (110) and Si(100) as well as Ge devices. Similarities and crucial differences between short channel parameters in Si and Ge are discussed.