Velocity of surface carriers in inversion layers on silicon

Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature

C. Canali, G. Majni, R. Minder et al. · IEEE Transactions on Electron Devices · 1975 · 645 citations

Engineering, Electrical Engineering, Physics +12

Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers

F. F. Fang, A. B. Fowler · Journal of Applied Physics · 1970 · 229 citations

Natural Sciences, Materials Science, Physics +17

Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces

Otto Leistiko, Andrew S. Grove, C. T. Sah · IEEE Transactions on Electron Devices · 1965 · 158 citations

Engineering, Electrical Engineering, Materials Science +17

Threshold voltage variations with temperature in MOS transistors

R. Wang, J.L. Dunkley, Thomas A. DeMassa et al. · IEEE Transactions on Electron Devices · 1971 · 72 citations

Engineering, Electrical Engineering, Materials Science +17

Carrier mobilities at weakly inverted silicon surfaces

J. T. C. Chen, R.S. Muller · Journal of Applied Physics · 1974 · 70 citations

Engineering, Electrical Engineering, Materials Science +17