Japanese Journal of Applied Physics · 2000 · 16 citations · 13 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionDopingMetal OxidesNitrogen OxidesSemiconductor Device MaterialsWide-bandgap Semiconductor DevicesElectrical PropertiesElectrical Properties AnalysisGallium NitrideGallium Nitride (Gan) MaterialsMetalorganic Chemical Vapor DepositionThermal AnnealingThermal Annealing Effects
The effect of oxygen mixed in nitrogen on p-type activation in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition (MOCVD) was investigated. The samples annealed in N 2 /O 2 (1%) ambient exhibited the best electrical properties with respect to hole concentration. SIMS data suggested that oxygen reacted with hydrogen present in the Mg-doped GaN samples during the thermal annealing process, thereby enhancing the activation of Mg acceptors.
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Thermal Annealing Effects on P-Type Mg-Doped GaN Films
Shuji Nakamura, Takashi Mukai, Masayuki Senoh et al. · Japanese Journal of Applied Physics · 1992 · 1.1K citations