Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate

Raman scattering from Ge<i>x</i>Si1−<i>x</i>/Si strained-layer superlattices

F. Cerdeira, A. Pinczuk, J. C. Bean et al. · Applied Physics Letters · 1984 · 263 citations

Natural Sciences, Materials Science, Physics +17

Defect self-annihilation in surfactant-mediated epitaxial growth

M. Horn‐von Hoegen, F. K. LeGoues, M. Copel et al. · Physical Review Letters · 1991 · 235 citations

Engineering, Materials Engineering, Materials Science +17

Novel strain-induced defect in thin molecular-beam epitaxy layers

F. K. LeGoues, M. Copel, R. M. Tromp · Physical Review Letters · 1989 · 133 citations

Natural Sciences, Materials Science, Physics +17

Ge segregation at Si/Si1−<i>x</i>Ge<i>x</i> interfaces grown by molecular beam epitaxy

P. C. Zalm, G. F. A. van de Walle, D. J. Gravesteijn et al. · Applied Physics Letters · 1989 · 114 citations

Engineering, Materials Engineering, Materials Science +17

Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb

Ken Fujita, S. Fukatsu, Hiroyuki Yaguchi et al. · Japanese Journal of Applied Physics · 1990 · 88 citations

Natural Sciences, Materials Science, Physics +17