A novel AlGaN/GaN multiple aperture vertical high electron mobility transistor with silicon oxide current blocking layer

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

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Engineering, Materials Engineering, Materials Science +17

CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

Srabanti Chowdhury, Man Hoi Wong, Brian L. Swenson et al. · IEEE Electron Device Letters · 2011 · 179 citations

Engineering, Electrical Engineering, Materials Science +12

A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

Masakazu Kanechika, M. Sugimoto, Narumasa Soejima et al. · Japanese Journal of Applied Physics · 2007 · 172 citations

Engineering, Electrical Engineering, Materials Science +17

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

Tsvetanka Zheleva, Scott A. Smith, Darren B. Thomson et al. · Journal of Electronic Materials · 1999 · 162 citations

Engineering, Materials Engineering, Materials Science +16

AlGaN/GaN current aperture vertical electron transistors with regrown channels

I. Ben-Yaacov, Yee-Kwang Seck, Umesh K. Mishra et al. · Journal of Applied Physics · 2004 · 149 citations · Full text

Engineering, Electrical Engineering, Materials Science +17