Growth of high-quality AlN with low pit density on SiC substrates

Preparation of atomically flat surfaces on silicon carbide using hydrogen etching

V. Ramachandran, M.F. Brady, Arthur R. Smith et al. · Journal of Electronic Materials · 1998 · 207 citations

Engineering, Materials Engineering, Materials Science +14

Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching

Fredrik Owman, C. Hallin, Per Mårtensson et al. · Journal of Crystal Growth · 1996 · 122 citations

Natural Sciences, Materials Engineering, Materials Science +12

Formation of periodic steps with a unit-cell height on 6H–SiC (0001) surface by HCl etching

Shun-ichi Nakamura, Tsunenobu Kimoto, Hiroyuki Matsunami et al. · Applied Physics Letters · 2000 · 102 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Growth of step-free surfaces on device-size (0001)SiC mesas

J. A. Powell, Philip G. Neudeck, Andrew J. Trunek et al. · Applied Physics Letters · 2000 · 100 citations

Engineering, Materials Engineering, Materials Science +17

The role of excess silicon and in situ etching on 4H SiC and 6H SiC epitaxial layer morphology

Albert A. Burk, L.B. Rowland · Journal of Crystal Growth · 1996 · 95 citations

Engineering, Materials Engineering, Materials Science +14