2MeV ion irradiation effects on AlGaN/GaN HFET devices

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

S.C. Binari, K. Ikossi, J.A. Roussos et al. · IEEE Transactions on Electron Devices · 2001 · 632 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Handbook of radiation effects

Choice Reviews Online · 1994 · 523 citations

Engineering, Radiation Physics, Radiation Effect +18

Photoluminescence of ion-implanted GaN

J. I. Pánkové, J.A. Hutchby · Journal of Applied Physics · 1976 · 341 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

Radiation hardness of gallium nitride

A. Ionascut-Nedelcescu, C. Carlone, A. Houdayer et al. · IEEE Transactions on Nuclear Science · 2002 · 335 citations

Electrical Engineering, Solid-state Lighting, Engineering +14

The Energy Dependence of Proton-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors

Xiao Hu, B.K. Choï, Hugh Barnaby et al. · IEEE Transactions on Nuclear Science · 2004 · 137 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +12