Effects of rapid thermal annealing on nitrided gate oxide grown on 4H-SiC

Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

Huifeng Li, Sima Dimitrijev, H.B. Harrison et al. · Applied Physics Letters · 1997 · 321 citations

Engineering, Materials Engineering, Materials Science +17

Effects of nitridation in gate oxides grown on 4H-SiC

Philippe Jamet, Sima Dimitrijev, Philip Tanner · Journal of Applied Physics · 2001 · 270 citations

Engineering, Materials Engineering, Materials Science +17

N<sub>2</sub>O Processing Improves the 4H-SiC:SiO<sub>2</sub> Interface

Lori A. Lipkin, Mrinal K. Das, John W. Palmour · Materials science forum · 2002 · 176 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +5

Progress towards SiC products

C. Harris, Susan Savage, Andrey O. Konstantinov et al. · Applied Surface Science · 2001 · 90 citations

Engineering, Materials Engineering, Materials Science +12

Charge-trapping properties of ultrathin nitrided oxides prepared by rapid thermal annealing

Takashi Hori, Hiroshi Iwasaki, K. Tsuji · IEEE Transactions on Electron Devices · 1988 · 88 citations

Natural Sciences, Materials Engineering, Materials Science +17