Applied Physics Letters · 2002 · 108 citations · 9 references
Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesBiaxial StrainIngan Epitaxial LayersSemiconductor NanostructuresNanoelectronicsMolecular Beam EpitaxyExternal Biaxial StrainEpitaxial GrowthCompound SemiconductorPhase Separation SuppressionMaterials SciencePhysicsNanotechnologyAluminum Gallium NitrideCategoryiii-v SemiconductorMicrostructureApplied PhysicsOptoelectronics
Phase separation suppression due to external biaxial strain is observed in InxGa1−xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the InxGa1−xN layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors.
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Origin of Luminescence from InGaN Diodes
K.P. O’Donnell, Robert Martin, P. G. Middleton · Physical Review Letters · 1999 · 489 citations
Luminescences from localized states in InGaN epilayers
Shigefusa F. Chichibu, T. Azuhata, T. Sota et al. · Applied Physics Letters · 1997 · 405 citations