J. R. Leite

Energy gap and optical properties of InxGa1xN

F. Bechstedt, J. Furthmüller, M. Ferhat et al. · physica status solidi (a) · 2003 · 99 citations

Optical Materials, Engineering, Electronic Structure +16

Evidence for Phase-Separated Quantum Dots in Cubic InGaN Layers from Resonant Raman Scattering

V. Lemos, E. F. da Silveira, J. R. Leite et al. · Physical Review Letters · 2000 · 98 citations · Full text

Engineering, Semiconductor Nanostructures, Ii-vi Semiconductor +16

Comparative Raman studies of cubic and hexagonal GaN epitaxial layers

A. Tabata, R. Enderlein, J. R. Leite et al. · Journal of Applied Physics · 1996 · 93 citations · Full text

Materials Science, Hexagonal Gan, Wide-bandgap Semiconductor +12

Lattice parameter and energy band gap of cubic AlxGayIn1−x−yN quaternary alloys

Miguel A. L. Marques, L. K. Teles, L. M. R. Scolfaro et al. · Applied Physics Letters · 2003 · 76 citations

Materials Science, Materials Engineering, Energy Band Gap +12

Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces

S. Martini, A. A. Quivy, A. Tabata et al. · Journal of Applied Physics · 2001 · 52 citations

Wide-bandgap Semiconductor, Photonics, Optical Materials +14