S. Martini

Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces

S. Martini, A. A. Quivy, A. Tabata et al. · Journal of Applied Physics · 2001 · 52 citations

Wide-bandgap Semiconductor, Photonics, Optical Materials +14

InAs/GaAs quantum dots optically active at 1.5 μm

M. J. da Silva, A. A. Quivy, S. Martini et al. · Applied Physics Letters · 2003 · 51 citations

Quantum Photonics, Optical Materials, Engineering +17

Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots

Celso de Araújo Duarte, E. C. F. da Silva, A. A. Quivy et al. · Journal of Applied Physics · 2003 · 40 citations · Full text

Materials Science, Ii-vi Semiconductor, Photoluminescence +14

Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy

S. Martini, A. A. Quivy, E. C. F. da Silva et al. · Applied Physics Letters · 2002 · 38 citations

Segregation Strength, Engineering, Crystal Growth Technology +18

Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface

S. Martini, A. A. Quivy, T. E. Lamas et al. · Journal of Crystal Growth · 2003 · 33 citations

Epitaxial Growth, Engineering, Physics +8