E. C. F. da Silva

InAs/GaAs quantum dots optically active at 1.5 μm

M. J. da Silva, A. A. Quivy, S. Martini et al. · Applied Physics Letters · 2003 · 51 citations

Engineering, Electrical Engineering, Materials Science +16

Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots

Celso de Araújo Duarte, E. C. F. da Silva, A. A. Quivy et al. · Journal of Applied Physics · 2003 · 41 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +14

Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy

S. Martini, A. A. Quivy, E. C. F. da Silva et al. · Applied Physics Letters · 2002 · 38 citations

Natural Sciences, Materials Science, Physics +17

Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface

S. Martini, A. A. Quivy, T. E. Lamas et al. · Journal of Crystal Growth · 2003 · 33 citations

Engineering, Materials Science, Physics +13

Classical and quantum magnetoresistance in a two-subband electron system

N. C. Mamani, G. M. Gusev, E. C. F. da Silva et al. · Physical Review B · 2009 · 26 citations

Natural Sciences, Physics, Condensed Matter Physics +14