L. K. Teles

Approximation to density functional theory for the calculation of band gaps of semiconductors

Luiz G. Ferreira, Marcelo Marques, L. K. Teles · Physical Review B · 2008 · 501 citations · Full text

Wide-bandgap Semiconductor, Engineering, Half Occupation +19

Slater half-occupation technique revisited: the LDA-1/2 and GGA-1/2 approaches for atomic ionization energies and band gaps in semiconductors

Luiz G. Ferreira, Marcelo Marques, L. K. Teles · AIP Advances · 2011 · 272 citations · Full text

Engineering, Atomic Ionization Energies, Computational Chemistry +16

Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach

Ronaldo Rodrigues Pelá, C. Caetano, Marcelo Marques et al. · Applied Physics Letters · 2011 · 170 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +17

Stability and electronic structure of two-dimensional allotropes of group-IV materials

Filipe Matusalem, Marcelo Marques, L. K. Teles et al. · Physical Review B · 2015 · 144 citations

Engineering, Low Dimensional Material, Electronic Structure +22

Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds

L. E. Ramos, L. K. Teles, L. M. R. Scolfaro et al. · Physical review. B, Condensed matter · 2001 · 140 citations

Wide-bandgap Semiconductor, Effective Masses, Engineering +17