Ronaldo Rodrigues Pelá

Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach

Ronaldo Rodrigues Pelá, C. Caetano, Marcelo Marques et al. · Applied Physics Letters · 2011 · 170 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +17

Comparing LDA-1/2, HSE03, HSE06 and<i>G</i>₀<i>W</i>₀approaches for band gap calculations of alloys

Ronaldo Rodrigues Pelá, Marcelo Marques, L. K. Teles · Journal of Physics Condensed Matter · 2015 · 85 citations

Engineering, Predicted Band Gap, Band Gap +18

Influence of structure and thermodynamic stability on electronic properties of two-dimensional SiC, SiGe, and GeC alloys

Ivan Guilhon, L. K. Teles, Marcelo Marques et al. · Physical Review B · 2015 · 69 citations

Engineering, Electronic Properties, Stanene +19

Electronic and optical properties of core–shell InAlN nanorods: a comparative study <i>via</i> LDA, LDA-1/2, mBJ, HSE06, <i>G</i>₀<i>W</i>₀ and BSE methods

Ronaldo Rodrigues Pelá, Ching‐Lien Hsiao, Lars Hultman et al. · Physical Chemistry Chemical Physics · 2024 · 59 citations · Full text

Fast and accurate approximate quasiparticle band structure calculations of ZnO, CdO, and MgO polymorphs

C. A. Ataide, Ronaldo Rodrigues Pelá, Marcelo Marques et al. · Physical review. B./Physical review. B · 2017 · 32 citations

Engineering, Theoretical Inorganic Chemistry, Mgo Oxides +20