D. J. As

The near band edge photoluminescence of cubic GaN epilayers

D. J. As, F. Schmilgus, C. Wang et al. · Applied Physics Letters · 1997 · 152 citations

Materials Science, Photoluminescence, Engineering +13

Epitaxial growth and optical transitions of cubic GaN films

D. Schikora, M. Hankeln, D. J. As et al. · Physical review. B, Condensed matter · 1996 · 142 citations

Materials Science, Wide-bandgap Semiconductor, Epitaxial Growth +13

Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films

R. Pässler, E. Griebl, H. Riepl et al. · Journal of Applied Physics · 1999 · 137 citations

Ii-vi Semiconductor, Znte Epitaxial Films, Electrical Engineering +14

Phase separation suppression in InGaN epitaxial layers due to biaxial strain

A. Tabata, L. K. Teles, L. M. R. Scolfaro et al. · Applied Physics Letters · 2002 · 108 citations · Full text

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +17

Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

P. D. C. King, T. D. Veal, C. F. McConville et al. · Applied Physics Letters · 2007 · 106 citations · Full text

Semiconductors, Surface Characterization, Engineering +14