Residual strains in GaN grown on 6H-SiC

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller et al. · Applied Physics Letters · 1996 · 829 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Yasuo Koide et al. · Journal of Crystal Growth · 1989 · 688 citations

Engineering, Materials Engineering, Materials Science +13

Thermal stress in GaN epitaxial layers grown on sapphire substrates

Takahiro Kozawa, Tetsu Kachi, H. Kano et al. · Journal of Applied Physics · 1995 · 298 citations

Natural Sciences, Materials Engineering, Materials Science +17

Relaxation Process of the Thermal Strain in the GaN/α-Al₂O₃ Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain

Theeradetch Detchprohm, Kazumasa Hiramatsu, Kenji Itoh et al. · Japanese Journal of Applied Physics · 1992 · 269 citations

Engineering, Materials Engineering, Materials Science +17

Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy

Kazumasa Hiramatsu · Japanese Journal of Applied Physics · 1993 · 232 citations

Engineering, Materials Engineering, Materials Science +17