Applied Physics Letters · 1985 · 18 citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceInterface ScienceMaterials ChemistrySemiconductor MaterialsAlloysEutectic TransformationsMetalsSemiconductor Device MaterialsSilicon MaterialsCross-sectional MicroscopyEutectic Melting BehaviorEutectic Melting TemperatureIon Beam IrradiationMeltingMelting TemperaturePolycrystalline SiliconSilicon
Interfacial melting at near eutectic compositions has been observed for three metal-silicon systems using pulsed ion beam irradiation. In all cases (Ni/Si, Co/Si, and Pt/Si), the reaction occurred below the melting temperature of either the deposited metal layer or the silicon substrate. Compositional steps in the reacted Ni/Si, Co/Si, and Pt/Si films were measured using Rutherford backscattering spectroscopy. These steps had the near eutectic compositions of Ni0.5Si0.5, Co0.73Si0.27, and Pt0.77Si0.23, respectively. The Ni/Si sample was examined using planar and cross-sectional transmission electron microscopy. It was found that the reacted layer, composed of polycrystalline NiSi and Ni2Si, formed a sharp interface with the silicon.
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Laser-induced reactions of platinum and other metal films with silicon
J. M. Poate, H. J. Leamy, T. T. Sheng et al. · Applied Physics Letters · 1978 · 115 citations · Full text
Ion-beam mixing of metal-semiconductor eutectic systems
S.S. Lau, B-Y. Tsaur, M. von Allmen et al. · Nuclear Instruments and Methods · 1981 · 86 citations
Natural Sciences, Materials Engineering, Materials Science +4
Liquid phase growth of epitaxial Ni and Co silicides
R. T. Tung, J. M. Gibson, D. C. Jacobson et al. · Applied Physics Letters · 1983 · 82 citations