Liquid phase growth of epitaxial Ni and Co silicides

Abstract

Epitaxial Ni and Co silicides have been fabricated using pulsed laser melting and ultrarapid solidification techniques. Interfacial instabilities and cell formation are suppressed during the liquid phase epitaxy by melting mono or disilicide layers. Single crystal NiSi2 and CoSi2 films have been grown on (100) and (111) Si. This method does not require ultrahigh vacuum deposition or reaction techniques.