Concepedia

R. Fastow

RF

Statistics

Publications

12

Citations

288

H-Index

11

Active since

1985

Affiliations

Technion – Israel Institute of Technology(Current)

Cornell University

Intel (United States)

R. Fastow is an author at Technion – Israel Institute of Technology specializing in engineering, applied physics, and physics.

Top concepts

EngineeringApplied PhysicsPhysicsMicroelectronicsElectrical EngineeringSurface ScienceMaterial Science3D MemoryAtomic PhysicsMicrostructure

Publications per year

1985–2021

12

Publications

12

Trapping effects in HgCdTe

Y. Nemirovsky, R. Fastow, M. Meyassed et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 71 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

30.2 A 1Tb 4b/Cell 144-Tier Floating-Gate 3D-NAND Flash Memory with 40MB/s Program Throughput and 13.8Gb/mm<sup>2</sup> Bit Density

A. Khakifirooz, Sriram Balasubrahmanyam, R. Fastow et al. · 2021 · 34 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

The excess carrier lifetime in vacancy- and impurity-doped HgCdTe

R. Fastow, Y. Nemirovsky · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1990 · 27 citations

Semiconductors, Ii-vi Semiconductor, Optical Materials +11

The excess carrier lifetime in <i>p</i>-type HgCdTe measured by photoconductive decay

R. Fastow, Y. Nemirovsky · Journal of Applied Physics · 1989 · 22 citations

Ii-vi Semiconductor, Photoluminescence, Engineering +14

Pulsed ion-beam melting of silicon

R. Fastow, Y. Maron, J. W. Mayer · Physical review. B, Condensed matter · 1985 · 19 citations

Ion Implantation, Engineering, Physics +9

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