Concepedia

Sriram Balasubrahmanyam

SB

2

Publications

52

Citations

2

H-Index

2021

Active since

Affiliations

Intel (United States)(Current)

Sriram Balasubrahmanyam is an author at Intel (United States) specializing in electrical engineering, memory devices, and computer architecture.

Top concepts

3D MemoryEngineeringMemory DevicesApplied PhysicsComputer MemoryMicroelectronicsMemory ReliabilityComputer EngineeringComputer ArchitectureElectrical Engineering

Publications per year

2021–2023

2

Publications

2

30.2 A 1Tb 4b/Cell 144-Tier Floating-Gate 3D-NAND Flash Memory with 40MB/s Program Throughput and 13.8Gb/mm<sup>2</sup> Bit Density

A. Khakifirooz, Sriram Balasubrahmanyam, R. Fastow et al. · 2021 · 34 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-nand Technology and Featuring a 23.3 Gb/mm <sup>2</sup> Bit Density

A. Khakifirooz, Eduardo Anaya, Sriram Balasubrahmanyam et al. · IEEE Solid-State Circuits Letters · 2023 · 18 citations

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