Normally-off dual gate AlGaN/GaN MISFET with selective area-recessed floating gate

Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno et al. · IEEE Transactions on Electron Devices · 2007 · 998 citations

Engineering, Electrical Engineering, Materials Science +14

High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

Yong Cai, Yugang Zhou, Kevin J. Chen et al. · IEEE Electron Device Letters · 2005 · 650 citations

Engineering, Electrical Engineering, Materials Science +17

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2006 · 560 citations

Engineering, Electrical Engineering, Materials Engineering +17

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

Rongming Chu, A. Corrion, M Chen et al. · IEEE Electron Device Letters · 2011 · 353 citations

Engineering, Electrical Engineering, Materials Science +17

Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors

M. Asif Khan, Q. Chen, C. J. Sun et al. · Applied Physics Letters · 1996 · 177 citations · Full text

Engineering, Electrical Engineering, Materials Science +16