GaN epilayers grown on 100 mm diameter Si(111) substrates

GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Hiroyasu Ishikawa, Guangyuan Zhao, Naoyuki Nakada et al. · Japanese Journal of Applied Physics · 1999 · 204 citations

Engineering, Materials Engineering, Materials Science +15

High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates

Patrick Kung, A. Saxler, X. Zhang et al. · Applied Physics Letters · 1995 · 166 citations

Engineering, Materials Engineering, Materials Science +14

GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy

Yoshinobu Nakada, Igor Aksenov, Hajime Okumura · Applied Physics Letters · 1998 · 151 citations

Engineering, Materials Engineering, Materials Science +17

GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer

Nobuhiko P. Kobayashi, J. T. Kobayashi, P.D. Dapkus et al. · Applied Physics Letters · 1997 · 83 citations

Engineering, Materials Engineering, Materials Science +14

SiC rapid thermal carbonization of the (111)Si semiconductor-on-insulator structure and subsequent metalorganic chemical vapor deposition of GaN

A. J. Steckl, J. Devrajan, C. A. Tran et al. · Applied Physics Letters · 1996 · 62 citations

Engineering, Materials Engineering, Materials Science +17