Jiangbin Wan

Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors

Matthew Marinella, D.K. Schroder, Tamara Isaacs‐Smith et al. · Applied Physics Letters · 2007 · 43 citations

4H-sic Metal, Semiconductor Technology, Electrical Engineering +11

GaN epilayers grown on 100 mm diameter Si(111) substrates

H.M. Liaw, R. Venugopal, Jiangbin Wan et al. · Solid-State Electronics · 2000 · 33 citations

Electrical Engineering, Engineering, Gan Epilayers +3

Growth of crack-free hexagonal GaN films on Si(100)

Jiangbin Wan, R. Venugopal, M. R. Melloch et al. · Applied Physics Letters · 2001 · 32 citations

Materials Science, Materials Engineering, Electrical Engineering +14

2.5kV/3.78mΩ⋅cm² Low Forward Voltage Vertical β-Ga₂O₃ Schottky Rectifier With Field Plate Assisted Deep Mesa Termination

Jiangbin Wan, Hengyu Wang, Ce Wang et al. · IEEE Electron Device Letters · 2024 · 29 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +8

3.3 kV-class NiO/<i>β</i>-Ga2O3 heterojunction diode and its off-state leakage mechanism

Jiangbin Wan, Hengyu Wang, C.Q. Zhang et al. · Applied Physics Letters · 2024 · 28 citations

Oxide Heterostructures, Wide-bandgap Semiconductor, Electrical Engineering +14