IEEE Transactions on Electron Devices · 1983 · 13 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesThin FilmsComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationDevice ModelingMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsShort-channel EffectsBuried Channel DevicesCharge NeutralityMosfet ModelingSiliconSilicon-on-insulator TechnologySurface Channel DevicesThreshold VoltageThreshold Voltage Modeling
Simple models for threshold characteristics of surface-channel MOSFET's, which are fabricated on a buried oxide covered by an electric field shielding layer, are proposed. The electric field shielding effect is taken into account when the Poisson's equation is solved. Threshold voltage expressions are derived from the solution of the Poisson's equation and the surface-channel charge neutrality relationship. Theoretical analysis shows that the thinner silicon layer leads to enhancement of the electric field which results in the reduction of the short-channel effect.
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Subthreshold conduction in MOSFET's
G.W. Taylor · IEEE Transactions on Electron Devices · 1978 · 155 citations
Engineering, Electrical Engineering, Electronic Materials +16