Optimization and Characterization of InAs/(AlGa)Sb Heterojunction Field-Effect Transistors

Abstract

We report the structural optimization and characterization of (AlGa)Sb/InAs quantum well heterojunction field-effect transistors based on molecular beam epitaxy (MBE). A 1.7- µm-gate-length InAs-channel FET with optimized heterostructure showed a transconductance of more than 460 mS/mm ( V ds =0.5v) at room temperature. Higher transconductance and drain current increase in the higher lateral electric field region ( V ds >0.8v) corresponds to the increased carrier concentration measured by the pulsed high-field Hall-effect method on ungated samples.