Concepedia
Statistics
Publications
24
Citations
439
H-Index
14
Active since
1990
Affiliations
Hokkaido University(Current)
Osaka Institute of Technology
Japan Science and Technology Agency
Paul Drude Institute for Solid State Electronics
Kanji Yoh is an author at Hokkaido University specializing in materials science, semiconductor physics, and semiconductor devices.
Publications per year
1990–2014
An InAs channel heterojunction field-effect transistor with high transconductance
Kanji Yoh, Toshiaki Moriuchi, M. Inoue · IEEE Electron Device Letters · 1990 · 54 citations
Engineering, Electrical Engineering, Materials Science +11
Datta-Das-type spin-field-effect transistor in the nonballistic regime
Munekazu Ohno, Kanji Yoh · Physical Review B · 2008 · 39 citations · Full text
Natural Sciences, Electrical Engineering, Physics +17
Indium Arsenide Quantum Wires Fabricated by Electron Beam Lithography and Wet-Chemical Etching
Kanji Yoh, Kazumasa Kiyomi, Akira Nishida et al. · Japanese Journal of Applied Physics · 1992 · 25 citations
Engineering, Electrical Engineering, Materials Science +17
Regular Array Formation of Self-Assembled InAs Dots Grown on Patterned (111)B GaAs Substrate by MBE
Toshiya Saitoh, Arata Tanimura, Kanji Yoh · Japanese Journal of Applied Physics · 1996 · 23 citations
Engineering, Materials Engineering, Materials Science +17
High quality Fe3−δO4∕InAs hybrid structure for electrical spin injection
M. Ferhat, Kanji Yoh · Applied Physics Letters · 2007 · 22 citations · Full text
Natural Sciences, Materials Science, Physics +16
1–5 of 24