W. I. Wang

Enhancement of modulation bandwidth in InGaAs strained-layer single quantum well lasers

Kam Y. Lau, Sixu Xin, W. I. Wang et al. · Applied Physics Letters · 1989 · 66 citations

Photonics, Quantum Science, Engineering +10

Inelastic tunneling in AlAs-GaAs-AlAs heterostructures

E. E. Méndez, E. Calleja, W. I. Wang · Applied Physics Letters · 1988 · 61 citations

Semiconductor Technology, Electrical Engineering, Engineering +9

Resonant interband tunneling via Landau levels in polytype heterostructures

E. E. Méndez, Hideo Ohno, L. Esaki et al. · Physical review. B, Condensed matter · 1991 · 60 citations

Gasb Holes, Wide-bandgap Semiconductor, Resonant Interband +10

Heterojunction field-effect transistors based on AlGaSb/InAs

L. F. Luo, R. Beresford, W. I. Wang et al. · Applied Physics Letters · 1989 · 54 citations

Wide-bandgap Semiconductor, Electrical Engineering, Device Configurations +11

Orientation dependence of valence-subband structures in GaAs-Ga1−<i>x</i>Al<i>x</i>As quantum-well structures

Mau‐Phon Houng, Yia‐Chung Chang, W. I. Wang · Journal of Applied Physics · 1988 · 53 citations

Semiconductors, Materials Science, Effective Masses +13