Heterojunction field-effect transistors based on AlGaSb/InAs

Abstract

We have fabricated the first InAs-channel field-effect transistor, which shows a transconductance of 180 mS/mm at 1 V drain-source bias (77 K). An improved buffer layer could significantly improve the device performance. In addition, we propose a new broken-gap heterojunction field-effect transistor based on these materials that could provide an order of magnitude higher transconductance compared to existing device configurations based on AlGaAs/GaAs.