Japanese Journal of Applied Physics · 1990 · 19 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDevice CharacterizationDevice ModelingDevice SimulationSemiconductor PhysicsThin-film TransistorsAvalanche BreakdownCarrier GenerationCarrier RecombinationCarrier Recombination DynamicsCharge Carrier RecombinationGrain BoundariesPolycrystalline SiliconPolycrystalline Silicon Thin-film Transistors
An accurate device simulator for polycrystalline silicon thin-film transistors is developed. In this simulator, the influences of grain boundaries (GBs) are incorporated into the mobility model, and the basic semiconductor equations are solved combining with the carrier generation/recombination model. As a result, it becomes possible to quantitatively analyze the influence of the GBs on the kink effect and the avalanche breakdown phenomenon, and the influences of the GB trap density and the grain size on the device characteristics.
4
Numerical simulation of polycrystalline-Silicon MOSFET's
R. Guerrieri, P. Ciampolini, A. Gnudi et al. · IEEE Transactions on Electron Devices · 1986 · 48 citations