High electron mobility pseudomorphic In0.52Al0.48As/In0.8Ga0.2As heterostructure on InP grown by flux-stabilized MBE

Calculation of critical layer thickness versus lattice mismatch for Ge<i>x</i>Si1−<i>x</i>/Si strained-layer heterostructures

R. People, J. C. Bean · Applied Physics Letters · 1985 · 1.7K citations

Engineering, Severe Plastic Deformation, Energy Balance +20

Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-x As and GaxIn1-x As epitaxial layers grown by molecular beam epitaxy

J. Massies, F. Turco, A. Salètes et al. · Journal of Crystal Growth · 1987 · 100 citations

Materials Science, Aluminium Nitride, Epitaxial Growth +8

60-GHz pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.28/Ga/sub 0.72/As low-noise HEMTs

K.L. Tan, R.M. Dia, D.C. Streit et al. · IEEE Electron Device Letters · 1991 · 49 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Surface segregation of third-column atoms in III–V ternary arsenides

F. Houzay, J. M. Moison, C. Guille et al. · Journal of Crystal Growth · 1989 · 24 citations

Engineering, Surface Science, Applied Physics +4

Elimination of the flux transients from molecular-beam epitaxy source cells following shutter operation

P. A. Chilton, W.S. Truscott, Ya‐Feng Wen · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 15 citations

Electrical Engineering, Control Theory, Engineering +11