Selective area growth of GaN microstructures on patterned (1 1 1) and (0 0 1) Si substrates

Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties

E. Calleja, M. A. Sánchez-Garcı́a, F.J. Sánchez et al. · Journal of Crystal Growth · 1999 · 196 citations

Engineering, Materials Engineering, Materials Science +14

Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy

Shota Kitamura, Kazumasa Hiramatsu, Nobuhiko Sawaki Nobuhiko Sawaki · Japanese Journal of Applied Physics · 1995 · 181 citations

Engineering, Materials Engineering, Materials Science +17

Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates

Jun Yang, A. Lunev, G. Simin et al. · Applied Physics Letters · 2000 · 121 citations

Engineering, Electrical Engineering, Materials Science +17

Defect structure in selective area growth GaN pyramid on (111)Si substrate

Shigeyasu Tanaka, Yasutoshi Kawaguchi, Nobuhiko Sawaki et al. · Applied Physics Letters · 2000 · 88 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth

S. Bidnyk, B. D. Little, Y. H. Cho et al. · Applied Physics Letters · 1998 · 77 citations

Engineering, Materials Engineering, Materials Science +17