Capacitance properties in <i>n</i>-type Al<i>x</i>Ga1−<i>x</i>As

Abstract

The electrical properties of n-type AlxGa1−x As, for x&amp;gt;0.2, are governed by deep donor states (formerly called DX centers) created by the isolated donor atoms. We have studied the capacitance properties of such layers for Si and Sn dopants. The meanings of the capacitance-voltage carrier profiling and of the capacitance dependence with temperature have been considered. The deep donor energy position with respect to the Γ minimum has been determined.