Concepedia

Determination of the free energy level of deep centers, with application to GaAs

Dirk Pons

Applied Physics Letters · 1980 · 62 citations · 11 references

DOI

Concepts

Abstract

A method is presented which allows the determination of the free energy level of deep centers by transient capacitance techniques. Preliminary results concerning deep centers in GaAs (E3, EL2, and chromium) are given.

References

11

Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

D. V. Lang · Journal of Applied Physics · 1974 · 3.7K citations

, , +16

Nonradiative capture and recombination by multiphonon emission in GaAs and GaP

C. H. Henry, D. V. Lang · Physical review. B, Solid state · 1977 · 1.2K citations

, , +16

Electron traps in bulk and epitaxial GaAs crystals

G. M. Martin, A. Mitonneau, A. Mircéa · Electronics Letters · 1977 · 730 citations

, , +16

Entropy of ionization and temperature variation of ionization levels of defects in semiconductors

J. A. Van Vechten, C. D. Thurmond · Physical review. B, Solid state · 1976 · 275 citations

, , +17

Electrical properties of platinum in silicon

S. D. Brotherton, Peter D. Bradley, J. Bicknell · Journal of Applied Physics · 1979 · 111 citations

, , +17