Dopant Loss Mechanism in n[sup +]∕p Germanium Junctions during Rapid Thermal Annealing

Activation and diffusion studies of ion-implanted p and n dopants in germanium

Chi On Chui, Kailash Gopalakrishnan, Peter B. Griffin et al. · Applied Physics Letters · 2003 · 280 citations

Engineering, Materials Engineering, Materials Science +17

Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate

Huiling Shang, K.-L. Lee, P. Kozlowski et al. · IEEE Electron Device Letters · 2004 · 171 citations

Engineering, Electrical Engineering, Materials Science +17

Diffusion of ion-implanted boron in germanium

Suresh Uppal, A. F. W. Willoughby, J. M. Bonar et al. · Journal of Applied Physics · 2001 · 113 citations

Engineering, Materials Engineering, Materials Science +15

Shrinkage and growth of oxidation stacking faults during thermal nitridation of silicon and oxidized silicon

Yoshinori Hayafuji, Kazuo Kajiwara, S. Usui · Journal of Applied Physics · 1982 · 46 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +15

Concentration Dependence of a Diffusion Coefficient at Phosphorus Diffusion in Germanium

Satoru Matsumoto, Tatsuya Niimi · Journal of The Electrochemical Society · 1978 · 37 citations

Natural Sciences, Materials Engineering, Materials Science +14