IEEE Electron Device Letters · 1989 · 30 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsComplementary Metal-oxide-semiconductor TechnologyDevice ScalingField-effect TransistorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsBicmos TechnologyCurrent DensityCurrent GainHeterojunction DevicesOffset Voltage
Operational bipolar inversion-channel field-effect transistors (BICFETs) based on the Ge/sub x/Si/sub 1-x//Si system are discussed. The 300 K current gain of beta =365 at a current density of J/sub c/=2.5*10/sup 4/ A/cm/sup 2/ is the highest value reported for any BICFET to date. The use of a double-heterojunction inversion channel eliminates the collector offset voltage. The present devices are limited by the channel resistance, so that performance improvements are expected for laterally-scaled-down devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Measurement of the band gap of Ge<i>x</i>Si1−<i>x</i>/Si strained-layer heterostructures
D. V. Lang, R. People, J. C. Bean et al. · Applied Physics Letters · 1985 · 311 citations
High-speed polysilicon emitter—base bipolar transistor
H.K. Park, K. Boyer, C. W. Clawson et al. · IEEE Electron Device Letters · 1986 · 40 citations
Demonstration of a p-channel GaAs/AlGaAs BICFET
G.W. Taylor, Michael Lebby, A. Izabelle et al. · IEEE Electron Device Letters · 1988 · 17 citations