A study of GaN regrowth on the micro-faceted GaN template formed by in situ HCl etching

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Engineering, Materials Engineering, Materials Science +17

Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

S. J. Rosner, Elizabeth C. Carr, M. J. Ludowise et al. · Applied Physics Letters · 1997 · 530 citations

Natural Sciences, Materials Engineering, Materials Science +17

High-power AlGaN/GaN HEMTs for Ka-band applications

Tomás Palacios, A. Chakraborty, Siddharth Rajan et al. · IEEE Electron Device Letters · 2005 · 492 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Kazumasa Hiramatsu, K. Nishiyama, Masaru Onishi et al. · Journal of Crystal Growth · 2000 · 414 citations

Engineering, Electrical Engineering, Materials Engineering +14

Dislocation mediated surface morphology of GaN

B. Heying, E. J. Tarsa, C. R. Elsass et al. · Journal of Applied Physics · 1999 · 407 citations

Natural Sciences, Materials Engineering, Materials Science +17