Applied Physics Letters · 1982 · 85 citations · 12 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingElectronic Band StructureSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsCarrier ConcentrationElectron MobilityHeterostructure DevicesHeterostructuresMobility EnhancementModulation DopingMolecular Beam EpitaxyTransport In Heterostructures
Modulation doped Ga0.47In0.53As-Al0.48In0.52 As single-period heterostructures have been prepared by molecular beam epitaxy (MBE). Electron mobilities as high as 8915 cm2/V s at 300 K, 60 120 cm2/V s at 77 K, and 90 420 cm2/V s at 10 K were obtained with an average electron concentration of ∼1017 cm−3. These results represent a mobility enhancement over uniformly doped Ga0.47In0.53 As with the same carrier concentration by about a factor of 6 at 77 K and by a factor of 2 at 300 K. Single-period modulation doped heterostructures have shown enhanced mobility in spite of the relative positions of the Si-doped Al0.48In0.52 As layer and the undoped Ga0.47In0.53 As layer in contrast to the case of GaAs/AlxGa1−x As system where mobility enhancement has only been observed for MBE grown AlxGa1−x As on top of the undoped GaAs layer.
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Electron mobilities in modulation-doped semiconductor heterojunction superlattices
R. Dingle, H. L. Störmer, A. C. Gossard et al. · Applied Physics Letters · 1978 · 1.5K citations