2006 · 32 citations · 8 references
Non-volatile MemoryEngineeringEmerging Memory TechnologyStochastic AnalysisSilicon On InsulatorStatistical SuperpositionDefect ToleranceFlash Memory ArraysNoiseElectrical EngineeringPhysicsOxide ElectronicsElectronic MemoryDefect FormationProbability TheoryMicroelectronicsTraps OccupancySilicon DebuggingCondensed Matter PhysicsApplied PhysicsSemiconductor Memory
We investigate the properties of traps in the SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> by means of a statistical analysis of random telegraph noise in Flash memory arrays. We develop a new physical model for the statistical superposition of the elementary Markov processes describing traps occupancy, able to explain the experimental evidence for cell threshold voltage instability. Comparing modeling results with experimental data allowed the estimation of the energy and space distribution of oxide defects
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Random telegraph noise of deep-submicrometer MOSFETs
Kuo-Hsiang Hung, P.K. Ko, Chenming Hu et al. · IEEE Electron Device Letters · 1990 · 308 citations