Material aspects of nickel silicide for ULSI applications

Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films

T. Ohguro, S. Nakamura, M. Koike et al. · IEEE Transactions on Electron Devices · 1994 · 151 citations

Engineering, Line Width, Integrated Circuits +18

Low-temperature redistribution of As in Si during Ni silicide formation

Iwao Ohdomari, Mikio Akiyama, Takashi Maeda et al. · Journal of Applied Physics · 1984 · 38 citations

Engineering, Hall Effect Measurement, Chemistry +18

Control of interfacial morphology: NiSi2/Si(100)

James P. Sullivan, R. T. Tung, F. Schrey · Journal of Applied Physics · 1992 · 35 citations

Engineering, Silicon On Insulator, Semiconductor Nanostructures +20

Electrical and structural properties of PtSi films in deep submicron lines

Dan‐Xia Xu, J. P. McCaffrey, Sayantan Das et al. · Applied Physics Letters · 1996 · 30 citations

Engineering, Silicide Films, Thin Film Process Technology +18

Process Windows of Nickel and Platinum Silicides in Deep Sub-Micron Regime

Dan‐Xia Xu, S. R. Das, J. P. McCaffrey et al. · MRS Proceedings · 1995 · 28 citations

Materials Science, Nanoscale Science, Process Windows +11