Mikio Akiyama

Low-temperature redistribution of As in Si during Pd2Si formation

Iwao Ohdomari, K. N. Tu, K. Suguro et al. · Applied Physics Letters · 1981 · 54 citations

Engineering, Materials Engineering, Materials Science +16

Low-temperature redistribution of As in Si during Ni silicide formation

Iwao Ohdomari, Mikio Akiyama, Takashi Maeda et al. · Journal of Applied Physics · 1984 · 38 citations

Engineering, Materials Engineering, Materials Science +16

Low temperature doping of arsenic atoms in silicon during Pd2Si formation

Iwao Ohdomari, K. Suguro, Mikio Akiyama et al. · Thin Solid Films · 1982 · 15 citations

Natural Sciences, Materials Engineering, Materials Science +15

Interface impurities of low-temperature (900 °C) deposited Si epitaxial films prepared by HF treatments

Akihiro Miyauchi, Yousuke Inoue, Takaya Suzuki et al. · Applied Physics Letters · 1990 · 14 citations

Engineering, Materials Engineering, Materials Science +17